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US 6,555,487 B1Granted
Method of selective oxidation conditions for dielectric conditioning
AssigneeMicron Technology, Inc.
InventorsRonald A. Weimer, Don Carl Powell
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AssigneeMicron Technology, Inc.
InventorsRonald A. Weimer, Don Carl Powell
Estimating the term…
A method for conditioning or repairing a dielectric structure of a semiconductor device structure with selectivity over an adjacent conductive or semiconductive structure of the semiconductor device structure, such as a capacitor dielectric and an adjacent bottom electrode of the capacitor. The method includes exposing the dielectric structure and at least an adjacent surface of the conductive or semiconductive structure to an oxidizing atmosphere that includes at least one oxidant and hydrogen species. The at least one hydrogen species adsorbs to a surface of the conductive or semiconductive structure so as to substantially prevent passage of the at least one oxidant into or through the conductive or semiconductive structure. The oxidant oxidizes or repairs voids or other defects that may be present in the dielectric structure. Semiconductor device structures fabricated by employing the method are also disclosed.
A method for conditioning a capacitor dielectric comprising selectively oxidizing an insulative material of said capacitor dielectric without substantially oxidizing a conductive material of a capacitor electrode underlying said capacitor dielectric by exposing at least said capacitor dielectric and adjacent surface of said capacitor electrode to an oxidizing atmosphere comprising at least one hydrogen species at least partially derived from a nitrogen containing species.
A method for repairing defects in a dielectric structure without substantially increasing a thickness of the dielectric structure and without substantially oxidizing a portion of a conductive or semiconductive structure adjacent the dielectric structure, comprising:
A method for preventing oxidation of a conductive or semiconductive structure during oxidation of an adjacent dielectric structure, comprising:
A method for increasing capacitance of a capacitor dielectric without substantially increasing a thickness of the capacitor dielectric, comprising:
A method for forming a capacitor, comprising:
Dependencies are inferred from the claim text.