US 6,555,485 B1 · Method for fabricating a gate dielectric layer

Abstract

This invention relates to a method for forming a gate dielectric layer, and, more particularly, to a method for treating a base oxide layer by using a remote plasma nitridation procedure and a thermal annealing treatment in turn to form the gate dielectric layer. The first step of the present invention is to form a base oxide layer on a substrate of a wafer. The base oxide layer can be formed using any kind of method. Then nitrogen ions are introduced into the base oxide layer using the remote plasma nitridation procedure to form a remote plasma nitrided oxide layer. Finally, the wafer is placed in a reaction chamber which comprises oxygen (O2) or nitric monoxide (NO) to treat the remote plasma nitrided oxide layer using the thermal annealing procedure and the gate dielectric layer of the present invention is formed.

Claims9

Dependent claims

A method for forming a gate dielectric layer, said method comprises:

providing a wafer, wherein said wafer comprises a substrate;
forming a base oxide layer on said substrate;
placing said wafer in a first chamber to proceed a remote plasma nitridation procedure to introduce a nitrogen ion into said base oxide layer, wherein said first chamber comprises a nitrogen and a carrier gas;
and
placing said wafer in a second reaction chamber to proceed a thermal annealing procedure, wherein said second chamber only contains an oxygen.

2 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/055,891Filed 28 Jan 2002

Granted

29 Apr 2003

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 64/01344
On single crystalline silicon, e.g. chemical oxidation using a liquid: in a nitrogen-containing ambient, e.g. N2O oxidation
H10D 64/0134
On single crystalline silicon, e.g. chemical oxidation using a liquid: with a treatment, e.g. annealing, after the formation of the insulator and…
H10D 64/693
Characterised by the insulator, e.g. by the gate insulator: the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
H10P 14/662
Characterised by the type of materials: laminate layers, e.g. stacks of alternating high-k metal oxides

Method for fabricating a gate dielectric layer

Life of this patent

Method for fabricating a gate dielectric layer

Life of this patent

Abstract

Claims9