Method for forming openings for conductive interconnects

A method for forming a patterned process layer, comprising:

• forming a process layer over a structure layer;
• forming a layer of mask material over the process layer;
• irradiating at least a portion of the layer of mask material with radiation of a first selected energy range generated by a radiation source to form a first affected region in the layer of mask material;
• irradiating at least a portion of the layer of mask material with radiation of a second selected energy range generated by the radiation source to form a second affected region in the layer of mask material;
• removing the first and second affected regions from the layer of mask material to form an etch profile;
• and
• performing an anisotropic etching process to erode the layer of mask material and to form an etched region in the process layer, the etched region having a profile correlating to the etch profile.

A method for forming a patterned process layer, comprising:

• forming a process layer above a structure layer;
• forming a first layer of mask material above the process layer;
• forming a second layer of mask material above the first layer of mask material;
• forming an etch profile in at least the first layer of mask material after forming the second layer of mask material;
• and
• performing an anisotropic etching process to form an etched region in the process layer, the etched region having a profile correlating to the etch profile.

A method for forming a conductive interconnect, comprising:

• forming a process layer over a structure layer;
• forming a mask over the process layer, the mask having a stepped etch profile formed therein by irradiating at least a portion of the mask with radiation of at least a first and second selected energy range generated by a radiation source, wherein forming the mask over the process layer comprises forming a layer of photoresist material over the process layer and forming a stepped etched profile in the layer of photoresist material;
• performing an anisotropic etching process to erode the mask and to form an etched region in the process layer, the etched region having a profile correlating to the stepped etch profile;
• forming a conductive material in the etched region in the process layer;
• and
• removing an excess conductive material from above an upper surface of the process layer.