Method of forming a protective layer included in metal filled semiconductor features
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng Lin Huang, Minghsing Tsai, Winston Shue, Mong-Song Liang
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Abstract
A method of forming a protective layer included in a metal filled semiconductor feature including providing a substrate including an insulating dielectric material having an anisotropically etched opening for forming a semiconductor feature; conformally depositing over the semiconductor feature at least one metal layer to substantially fill the semiconductor feature at least a portion of the at least one metal layer containing dopant impurities; and, thermally treating the substrate for a time period sufficient to redistribute the dopant impurities to preferentially collect along the periphery of the at least one metal layer.
Claims20
A method of forming a protective layer included in a metal filled semiconductor feature comprising the steps of:
- providing a substrate including an insulating dielectric material having an anisotropically etched opening for forming a semiconductor feature;
- conformally depositing over the semiconductor feature at least one metal layer to substantially fill the semiconductor feature at least a portion of the at least one metal layer containing dopant impurities;
- and
- thermally treating the substrate for a time period sufficient to redistribute the dopant impurities to preferentially collect along the periphery of the at least one metal layer.
Dependencies are inferred from the claim text.