Methods of fabricating buried digit lines

A method for fabricating at least one conductive line of a semiconductor device structure and interconnecting the at least one conductive line with at least one corresponding active device region of the semiconductor device structure, comprising:

• forming a layer comprising conductive material over the semiconductor device structure;
• defining at least one conductive line from said layer;
• forming at least one trench in the semiconductor device structure so as to expose at least one active device region thereof;
• substantially filling said at least one trench in which the at least one corresponding active device region is located with a mask, said mask also contacting the at least one conductive line;
• forming an insulative structure at least laterally adjacent said mask;
• removing at least a portion of said mask from said at least one trench so as to expose the at least one active device region therein;
• and
• introducing conductive material into said at least one trench, between the at least one conductive line and the at least one corresponding active device region.