Fully nickel silicided metal gate with shallow junction formed
AssigneeAdvanced Micro Devices, Inc.
InventorsQi Xiang, Christy Mei-Chu Woo, George J. Kluth
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Abstract
Semiconductor devices having fully metal silicided gate electrodes, and methods for making the same, are disclosed. The devices have shallow S/D extensions with depths of less than about 500 Å. The methods for making the subject semiconductor devices employ diffusion of dopant from metal suicides to form shallow S/D extensions, followed by high energy implantation and activation, and metal silicidation to form S/D junctions having metal silicide connect regions and a fully metal silicided electrode.
Claims18
A method of manufacturing a semiconductor device having a fully silicided gate electrode and shallow S/D extensions comprising:
- (a) providing a precursor semiconductor device comprising a substrate, a gate dielectric, a gate electrode and a spacer;
- (b) depositing a layer of α-Si on the surface of the precursor semiconductor device;
- (c) implanting dopant ions into the α-Si layer and activating to form a doped α-Si layer;
- (d) depositing a layer of a metal capable of forming a silicide over the doped α-Si layer;
- (e) annealing the device to form a metal silicide layer from which dopant segregates to form shallow S/D extensions;
- (f) removing unreacted metal, metal silicide and spacer;
- (g) implanting additional dopant ions and activating to form deep, highly doped S/D junctions;
- (h) depositing a layer of metal capable of forming a metal silicide on the device;
- (i) annealing the device to form a fully metal silicided gate electrode;
- and
- (j) removing unreacted metal to form a semiconductor device having fully silicided gate electrode and shallow S/D extensions.
A semiconductor device comprising a substrate, a gate dielectric, a gate electrode, spacers, and S/D junctions, wherein the gate electrode is a fully metal silicided gate electrode.
Dependencies are inferred from the claim text.