Method for growing p-type III-V compound material utilizing HVPE techniques

A method of growing a p-type GaN material utilizing HVPE techniques, the method comprising the steps of:

• positioning a gallium source on a first sapphire boat;
• locating said first sapphire boat and said gallium source within a first source zone of a reaction chamber;
• positioning a magnesium metal on a second sapphire boat;
• locating said second sapphire boat and said magnesium metal within a second source zone of said reaction chamber;
• locating a substrate within a growth zone of said reaction chamber;
• heating said substrate to a first temperature within the temperature range of 1000° C. to 1100° C.;
• heating said gallium source to a second temperature within the temperature range of 750° C. to 1050° C.;
• heating said magnesium metal to a third temperature within the temperature range of 550° C. to 650° C.;
• introducing a halide reaction gas into said first source zone to form a gallium chloride compound;
• transporting said gallium chloride compound to said growth zone;
• introducing an ammonia gas into said growth zone;
• introducing an inert gas into said second source zone;
• flowing said inert gas through said second source zone in order to deliver said magnesium metal to said growth zone;
• and
• growing said p-type GaN layer through a reaction of said ammonia gas and said gallium chloride compound, wherein said p-type GaN layer contains a concentration of said magnesium metal in the range of 1019 to 1020 atoms cm−3.

A method of growing a p-type AlGaN material utilizing HVPE techniques, the method comprising the steps of:

• positioning a gallium source on a first sapphire boat;
• locating said first sapphire boat and said gallium source within a first source zone of a reaction chamber;
• positioning a magnesium metal on a second sapphire boat;
• locating said second sapphire boat and said magnesium metal within a second source zone of said reaction chamber;
• positioning a aluminum source on a silicon carbide boat;
• locating said silicon carbide boat and said aluminum source within a third source zone of said reaction chamber;
• locating a substrate within a growth zone of said reaction chamber;
• heating said substrate to a first temperature within the temperature range of 1000° C. to 1100° C.;
• heating said gallium source to a second temperature within the temperature range of 750° C. to 1050° C.;
• heating said magnesium metal to a third temperature within the temperature range of 550° C. to 650° C.;
• heating said aluminum source to a fourth temperature within the temperature range of 700° C. to 850° C.;
• introducing a halide reaction gas into said first source zone to form a gallium chloride compound;
• introducing said halide reaction gas into said third source zone to form an aluminum trichloride compound;
• simultaneously transporting said gallium chloride compound and said aluminum trichloride compound to said growth zone;
• introducing an ammonia gas into said growth zone;
• introducing an inert gas into said second source zone;
• flowing said inert gas through said second source zone in order to deliver said magnesium metal to said growth zone;
• and
• growing said p-type AlGaN layer through a reaction of said ammonia gas and said gallium chloride compound, wherein said p-type AlGaN layer contains a concentration of said magnesium metal in the range of 1019 to 1020 atoms cm−3.