Body contact silicon-on-insulator transistor and method
AssigneeTexas Instruments Incorporated
InventorSreenath Unnikrishnan
Life of this patent
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Abstract
A method for fabricating a body contact silicon-on-insulator transistor (10) includes forming a semiconductor substrate (12) over an insulator (14) and lightly doping the semiconductor substrate (12) to form a body region (18). The method also includes forming a gate (20) over the semiconductor substrate (12) and separated from the semiconductor substrate (12) by a gate insulator layer (21). The gate (20) defines a source region (22), a drain region (24) and a contact region (26). The method also includes masking a portion (36) of the gate (20) and the contact region (26) and heavily doping the source region (22), the drain region (24) and an unmasked portion (36) of the gate (20) with a material having a conductivity substantially opposite a conductivity of the body region (18).
Claims13
A method for fabricating a body contact transistor, comprising:
- depositing a semiconductor substrate over an insulator;
- lightly doping the semiconductor substrate to form a body region;
- forming a gate on an upwardly facing surface of the semiconductor substrate and separated from the semiconductor substrate by a gate insulator layer, the gate defining a source region, a drain region on opposing sides of said gate in said body region and a contact region in said body region remote from said source and drain regions;
- masking a portion of the gate disposed over the contact region;
- and concurrently heavily doping the source region, the drain region and an unmasked portion of the gate with a material having a conductivity substantially opposite a conductivity of the body region while the contact region remains masked.
A method for fabricating a body contact transistor, comprising:
- providing a semiconductor structure having a semiconductor substrate formed over an insulator;
- lightly doping the semiconductor substrate to form a body region;
- forming a gate on an upwardly facing surface of the semiconductor substrate and separated from the upwardly facing surface of the semiconductor substrate by a gate insulator layer, the gate defining a source region, a drain region on opposing sides of said gate in said body region, and a contact region coupled to said body region remote from said source and drain regions;
- masking the contact region and a portion of the gate disposed over the contact region;
- and concurrently heavily doping the source region, the drain region and an unmasked portion of the gate with a material having a conductivity substantially opposite a conductivity of the body while the contact region remains masked.
A method for fabricating a body contact transistor, comprising:
- providing a semiconductor structure having a semiconductor substrate formed over an insulator;
- lightly doping the semiconductor substrate to form a body region;
- forming a gate on an upwardly facing surface of the semiconductor substrate and separated from the upwardly facing surface of the semiconductor substrate by a gate insulator layer, the gate defining a source region, a drain region, and a contact region, the contact region coupled to the body region;
- masking the contact region and a portion of the gate disposed adjacent the contact region;
- and
- heavily doping the source region, the drain region and an unmasked portion of the gate with a material having a conductivity substantially opposite a conductivity of the body;
- wherein the masked portion of the gate is disposed between the contact region and the source and drain regions;
- wherein forming the gate comprises:
- forming a first region of the gate, the source region and the drain region disposed on either side of the first region;
- and
- forming a second region of the gate substantially perpendicular to and disposed at one end of the first region;
- and
- wherein masking the portion of the gate adjacent the contact region comprises masking the second region of the gate.
Dependencies are inferred from the claim text.