Method for production of a thin film and a thin-film solar cell, in particular, on a carrier substrate
AssigneeRobert Bosch GmbH
InventorsHans Artmann, Wilhelm Frey, Manfred Moellendorf
Life of this patent
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Abstract
A method for producing a thin film on a carrier substrate. For this purpose, a buried sacrificial layer is initially produced in the interior of a parent body, the buried sacrificial layer separating a layer from a residual body remaining from the parent body. After that, the carrier substrate is attached to the layer and the sacrificial layer is then removed. As a result, the thin film to be produced comes into being on the carrier substrate. The method is suitable for the production of electronic components or thin-film solar cells, the parent body being made up, for example, of monocrystalline silicon in which a sacrificial layer of porous silicon is produced.
Claims26
A method for producing a thin film, comprising, in sequence:
- producing a buried sacrificial layer in an interior portion of a parent body, wherein a particular layer is defined between a surface of the parent body and the buried sacrificial layer, and wherein a residual body remains in the parent body, wherein the buried sacrificial layer separates the particular layer from the residual body;
- converting the buried sacrificial layer into a porous structure;
- attaching a carrier substrate to the particular layer;
- and
- mechanically removing the buried sacrificial layer, wherein the particular layer forms the thin film.
A method for producing a thin film from a parent body, the parent body having a surface area on at least one surface, the method comprising:
- bombarding the surface area of the parent body with hydrogen, whereby the hydrogen has a kinetic energy, whereby the hydrogen produces a buried sacrificial layer, and whereby the buried sacrificial layer defines a particular layer at the at least one surface of the parent body;
- after the step of bombarding, thermally activating the parent body;
- after the step of thermally activating, producing etch holes in the particular layer, the etch holes having a depth to reach the buried sacrificial layer;
- and
- after the step of producing etch holes, etching the buried sacrificial layer, wherein the buried sacrificial layer is made porous.
Dependencies are inferred from the claim text.