Method and apparatus for manufacturing semiconductor device

A method for manufacturing a semiconductor device including a film-forming process for causing a film-forming gas to flow over a surface of a substrate substantially in parallel therewith to form thin films on said substrate surface, said film-forming process comprising:

• an initial film-forming step for forming a first thin film on the surface of said substrate;
• and a main film-forming step for forming, on said first thin film acting as a backing layer, a second thin film at a film-forming rate greater than that in said initial film-forming step.

A method for manufacturing a semiconductor device including a film-forming process for forming thin films of tantalum oxide on a surface of a substrate by using a film-forming gas including a gas evaporated from pentaethoxy tantalum, said film-forming process comprising:

• an initial film-forming step for forming a first thin film of tantalum oxide on the surface of said substrate under a first film-forming condition;
• and a main film-forming step for forming, on said first thin film acting as a backing layer, a second thin film of tantalum oxide having a thickness greater than that of said first thin film under a second film-forming condition that differs from said first film-forming condition.

A method for manufacturing a semiconductor device including a film-forming process for forming thin films of tantalum oxide on a surface of a substrate by using a film-forming gas including a gas evaporated from pentaethoxy tantalum, said film-forming process comprising:

• an initial film-forming step for forming a first thin film of tantalum oxide on the surface of said substrate under a first film-forming condition;
• and a main film-forming step for forming, on said first thin film acting as a backing layer, a second thin film of tantalum oxide having a thickness greater than that of said first thin film under a second film-forming condition that differs from said first film-forming condition;
• wherein said initial film-forming step and said main film-forming step are performed continuously in a common reaction chamber by means of a thermal CVD method.