Thin film transistors
AssigneeLucent Technologies Inc.
InventorsZhenan Bao, Edwin Arthur Chandross, John A. Rodgers
Life of this patent
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Abstract
The specification describes thin film transistor (TFT) devices with source/drain contacts made by a metallo organic deposition (MOD) method wherein a metallo organic compound/metal particulate mixture is deposited to form a base pattern, and the base pattern is then plated with gold. The porous, relatively high resistance base pattern is thereby converted to a corrosion resistant, low resistance contact. The plating covers the sidewalls of the base pattern, thus allowing the final channel length to be less than the minimum design rule used for depositing the base pattern.
Claims19
A method for manufacturing an integrated circuit thin film transistor device comprising:
- a. preparing a substrate, the substrate comprising an organic semiconductor material,
- b. forming a plurality of field effect thin film transistors on the substrate, the plurality of thin film field effect transistors made by the steps comprising:
- 1. forming a source contact on the substrate,
- 2. forming a drain contact on the substrate and spaced from the source electrode leaving a channel location therebetween,
- 3. depositing a dielectric layer covering both the source contact and the drain contact, and
- 4. forming a gate electrode overlying the channel location, the invention characterized in that the source and drain contacts are formed by the steps of:
- i. forming a base pattern to define the area of the source and drain contacts, the base pattern formed by depositing a mixture of metal particulates, a MOD material, and a carrier, and
- ii. depositing a layer of gold on the base pattern.
A method for the manufacture of an integrated circuit thin film transistor device comprising forming a plurality of thin film field effect transistors on an insulating substrate, the plurality of thin film field effect transistors made by the steps of:
- a. forming a field effect transistor gate,
- b. forming a gate dielectric layer over the field effect transistor gate,
- c. forming a source contact and a drain contact on the gate dielectric layer by steps comprising:
- i. forming a base pattern to define the areas of the source and drain contacts, and the base pattern formed by depositing a mixture of metal particulates, a MOD material, and a carrier, and
- ii. depositing a layer of gold on the base pattern,
- e. forming an organic semiconductor layer between the source and drain contacts.
A method for the manufacture of an integrated circuit thin film transistor device comprising forming a plurality of thin film field effect transistors on an insulating layer, said plurality of thin film field effect transistors comprising a source contact, a drain contact, a gate electrode, and an organic semiconductor active layer, said source and drain contacts made by the steps of:
- a. forming a base pattern to define the areas of the source and drain contacts, the base pattern formed by depositing a mixture of metal particulates, a MOD material, and a carrier,
- b. depositing a layer of gold on the base pattern.
Dependencies are inferred from the claim text.