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US 6,555,407 B1Granted
Method for the controlled oxidiation of materials
AssigneeZarlink Semiconductor Inc.
InventorsNicolae Pantazi Chitica, Fredrik Salomonsson, Anita Risberg
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Abstract
A method of carrying out the controlled oxidation of A material, such as Al(Ga)As is oxidized in a controlled manner placing it in a reactor, and causing a carrier gas containing an oxidizing vapour, such as water, at a controlled partial pressure to flow over the oxidizable Material. In this way, the reaction process can be made sensitive to only one variable.
Claims10
A method of carrying out the controlled oxidation of an Al-containing compound semiconductor oxidizable material, comprising the steps of
- placing the oxidizable material in a reactor,
- causing a carrier gas to flow over said oxidizable material, said carrier gas containing an oxidizing vapor at a controlled partial pressure, said oxidizing vapor being generated in a thermostatically controlled bath and wherein the oxidizing vapor is maintained in equilibrium with water in the bath and controlling said partial pressure to determine the oxidation rate of said oxidizable material.
Dependencies are inferred from the claim text.