Method for forming a semiconductor device having a metal substrate
AssigneeUni Light Technology Inc.
InventorsNai-Chuan Chen, Bor-Jen Wu, Yuan-Hsin Tzou, Nae-Guann Yih, Chien-An Chen
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Abstract
The present invention provides a method for forming a semiconductor device with a metal substrate. The method includes providing at least one semiconductor substrate; forming at least one semiconductor layer on the semiconductor substrate; forming the metal substrate on the semiconductor substrate and then removing the semiconductor substrate. The metal substrate has advantages of high thermal and electrical conductivity that can improve the reliability and lifetime of the semiconductor device.
Claims15
A method for forming a light emitting diode with a metal substrate, said method comprising:
- providing a semiconductor substrate;
- forming an epitaxial layer on said semiconductor substrate, said epitaxial layer consisting of a plurality of semiconductor layers for forming light emitting diode;
- forming a metal ohmic electrode layer on said epitaxial layer;
- forming said metal substrate on said metal ohmic electrode layer;
- removing said semiconductor substrate;
- and
- forming a ohmic electrode bonding pad on said epitaxial layer.
Dependencies are inferred from the claim text.