Semiconductor laser, semiconductor light emitting device, and methods of manufacturing the same
AssigneeFujitsu Limited
InventorsKay Domen, Shinichi Kubota, Akito Kuramata, Reiko Soejima
Life of this patent
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Abstract
There are provided a semiconductor laser, a semiconductor light emitting device, and methods of manufacturing the same wherein a threshold current density in a short wavelength semiconductor laser using a nitride compound semiconductor can be reduced. An active layer is composed of a single gain layer having a thickness of more than 3 nm, and optical guiding layers are provided between the active layer and cladding layers respectively.
Claims58
An edge emitting type semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- a first cladding layer including a first type impurity, and said first cladding layer formed on or above said substrate;
- a first optical guiding layer formed on said first cladding layer;
- an active layer composed of a single gain layer including AlxGayIn1−x−yN (where 0≦x<1, 0<y≦1) and having thickness of more than 3 nm, and below 10 nm and formed on said first cladding layer;
- a second optical guiding layer formed on said active layer;
- and
- a second cladding layer including second type impurity formed on said second optical guiding layer.
An edge emitting type semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- a first cladding layer including a first type impurity, and said first cladding layer formed on or above said substrate;
- an active layer compound of a single gain layer including AlxGayIn1−x−yN (where 0≦x<1, 0<y≦1) and having a thickness of more than 3 mn, and said active layer formed of an undoped compound semiconductor layer and on or above said first cladding layer;
- and
- a second cladding layer including a second type impurity, and said second cladding layer formed on or above said active layer.
An edge emitting type semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- a first cladding layer formed on or above said substrate;
- an active layer composed of a double quantum well structure having two gain layers including AlxGayIn1−x−yN (where 0≦x<1, 0<y≦1) and, and said active layer formed on or above said first cladding layer;
- a second cladding layer formed on or above said active layer;
- and
- an electron blocking layer formed between said active layer and said second cladding layer.
An edge emitting type semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- a first cladding layer formed on or above said substrate;
- an active layer composed of a multi-quantum well structure having two or three gain layers each of which includes AlxGayIn1−x−yN (where 0≦x<1, 0<Y≦1) and having a thickness of more than 6 nm, and said active layer formed on or above said first cladding layer;
- and
- a second cladding layer formed on or above said active layer.
A semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- p-type and n-type cladding layers formed above said substrate;
- and
- an active layer including a multi-quantum well structure and having an emitted light intensity distribution, and said active layer formed between said p-type and n-type cladding layers, and said emitted light intensity distribution having a maximum position shifted toward said p-type claddirng layer side.
A semiconductor laser using a nitride compound semiconductor, characterized in that a single quantum well structure is employed as an active layer, and a wide forbidden bandwidth layer is provided between said active layer and a p-side optical guiding layer, said wide forbidden bandwidth layer having a forbidden bandwidth wider than a forbidden bandwidth of said p-side optical guiding layer, wherein a deviation between a maximum position of an emitted light intensity distribution and a center position of said active layer due to said forbidden bandwidth layer can be compensated by an n-side layer.
A semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- p-type and n-type cladding layers formed on or above said substrate;
- an active layer formed between said p-type and n-type cladding layers;
- a p-side optical guiding layer is composed of either InGaN or GaN, and an impurity concentration of said p-side optical guiding layer is set below 1×1017 atoms/cm3, said p-side optical guiding layer formed between said p-type cladding layer and said active layer;
- and
- an n-side optical guiding layer formed between said n-type cladding layer and said active layer.
A semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- p-type and n-type cladding layers formed on or above said substrate;
- an active layer formed between said p-type and n-type cladding layers;
- an n-side optical guiding layer formed between said n-type cladding layer and said active layer;
- and
- a p-side optical guiding layer formed between said p-type cladding layer and said active layer, and said p-side optical guiding layer having a thickness set thinner than that of said n-side optical guiding layer.
A semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- p-type and n-type cladding layers formed on or above said substrate;
- an active layer formed between said p-type and n-type cladding layers;
- an n-side optical guiding layer formed between said n-type cladding layer and said active layer;
- and
- a p-side optical guiding layer formed between said p-type cladding layer and said active layer, and said p-side optical guiding layer having a thickness set below 0.1 μm.
A semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- p-type and n-type cladding layers formed on or above said substrate;
- an active layer formed between said p-type and n-type cladding layers;
- an n-side optical guiding layer formed between said n-type cladding layer and said active layer;
- and
- a p-side optical guiding layer formed between said p-type cladding layer and said active layer, and a forbidden bandwidth in a region adjacent said p-type cladding layer wider than that in a region adjacent said active layer.
A semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- p-type and n-type cladding layers formed on or above said substrate;
- an active layer formed between said p-type and n-type cladding layers;
- an n-side optical guiding layer formed between said n-type cladding layer and said active layer;
- and
- a p-side optical guiding layer formed between said p-type cladding layer and said active layer, and a forbidden banwidth changed continuously from a side adjacent said active layer to a side adjacent said p-type cladding layer.
A semiconductor light emitting device using a nitride compound semiconductor, characterized in thata distribution or photoluminescence wavelengths in an active layer in a resonator is less than 90 meV.
A semiconductor light emitting device using a nitride compound semiconductor, characterized in that a dislocation density in an active layer in a resonator is set less than 1×109 cm−2.
A semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- p-type and n-type cladding layers formed on or above said substrate, and said p-type cladding layer composed of a multi-layered structure in which an intermediate layer is put between two p-type semiconductor layers, a forbidden bandwidth of said intermediate layer is narrower than that of said two p-type semiconductor layers;
- and
- an active layer formed between said p-type and n-type cladding layers.
An edge emitting type semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- n-type and p-type cladding layers formed over said substrate;
- an active layer formed between said p-type and n-type cladding layers;
- and
- an electron blocking layer provided between said p-type cladding layer and said active layer, wherein an impurity concentration in said electron blocking layer is set below 1.0×1017 atoms/cm3.
A semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- p-type and n-type cladding layers formed on or above said substrate;
- an active layer formed between said p-type and n-type cladding layers;
- and
- an electron blocking layer formed between said active layer and said p-type cladding layer, and said electron blocking layer having an energy bandgap width which changes gradually in a p-side region near said p-type cladding layer.
A semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- p-type and n-type cladding layers formed on or above said substrate;
- an active layer formed between said p-type and n-type cladding layers;
- and
- an electron blocking layer formed between said active layer and said p-type cladding layer, and said electron blocking layer having an energy band width changing gradually in an n-side region near said active layer.
A semiconductor laser using a nitride compound semiconductor, comprising:
- a substrate;
- p-type and n-type cladding layers formed on or above said substrate;
- an active layer formed between said p-type and n-type cladding layers;
- and
- an electron blocking layer formed between said active layer and said p-type cladding layer, and said electron blocking layer having an energy band width changing gradually in an n-side region near said active layer and changing gradually in a p-side region near said p-type cladding layer.
A semiconductor laser using a nitride compound semiconductor, comprising
- a substrate;
- p-type and n-type cladding layers formed on or above said substrate;
- an active layer formed between said p-type and n-type cladding layers;
- and
- an electron blocking layer formed between said active layer and said p-type cladding layer, and said electron blocking layer including Mg of a concentration more than 7×1019 atoms/cm3.
Dependencies are inferred from the claim text.