Methods of fabricating capacitors including Ta2O5 layers in a chamber including changing a Ta2O5 layer to heater separation or chamber pressure

A method of manufacturing a capacitor of a semiconductor device comprising the steps of:

• forming a lower electrode on a semiconductor substrate;
• forming a Ta2O5 layer on the lower electrode;
• curing the Ta2O5 layer by annealing the Ta2O5 layer in a process chamber in an ozone atmosphere at a temperature that is less than a crystallization temperature of the Ta2O5 layer;
• and then
• crystallizing the Ta2O5 layer by heating the Ta2O5 layer in the same process chamber to a temperature that is greater than or equal to the crystallization temperature of the Ta2O5 layer, wherein a heater maintains the Ta2O5 layer at a second temperature that is greater than or equal to the crystallization temperature of the Ta2O5 layer between curing the Ta2O5 layer and crystallizing the Ta2O5 layer;
• wherein a plurality of moveable pins control a separation distance between the semiconductor substrate and a stage on which the Ta2O5 layer is mounted by moving the plurality of pins up and down to move the stage relative to the heater;
• and
• the step of curing is performed in a first state where the plurality of pins are moved up to a predetermined height from the stage such that the semiconductor substrate is apart from the stage by a predetermined distance, and
• the step of crystallizing is performed in a second state where the plurality of pins are not projected from the stage so that the semiconductor substrate remains in contact with the stage.