Ni-plated target diffusion bonded to a backing plate and method of making same
AssigneeHoneywell International Inc.
InventorsRitesh P. Shah, David E. Steele, William R. Turner, Anthony F. Beier, Janine K. Kardokus, Susan D. Strothers
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Abstract
The invention includes a method of forming a heat treated sputtering target assembly. A backing plate is diffusion bonded to a sputtering target to produce a sputtering target assembly. The sputtering target assembly is heat treated to precipitation harden the backing plate of the assembly. The heat treatment includes heating and quenching, with the quenching being performed by immersing the backing plate in a quenchant without submerging the sputtering target.
Claims11
A sputtering target assembly comprising a precipitation hardened backing plate diffusion bonded to a sputtering target having a coefficient of thermal expansion different from the backing plate, the assembly having a Ni-comprising material between the backing plate and the sputtering target.
A sputtering target assembly comprising a precipitation hardened backing plate diffusion bonded to a sputtering target having a coefficient of thermal expansion different from the backing plate, the assembly having vacuum annealed Ni plated on the sputtering target between the backing plate and the sputtering target.
A sputtering target assembly comprising a precipitation hardened backing plate diffusion bonded to a sputtering target, the assembly having a Ni-comprising material between the backing plate and the sputtering target, wherein the backing plate comprises aluminum or an aluminum alloy and exhibits a hardened temper comprising O, T4, or T6.
Dependencies are inferred from the claim text.