Back to results
US 6,555,234 B1Granted
Barrier for and a method of reducing outgassing from a photoresist material
AssigneeAdvanced Micro Devices, Inc.
InventorFan Piao
Life of this patent
Estimating the term…
Abstract
A barrier layer can be provided over a photoresist film to prevent outgassing. The barrier layer can be relatively highly transmissive to radiation at the actinic wavelength. The barrier layer can be removed before the photoresist layer is developed.
Claims20
An integrated circuit wafer, the wafer comprising
- a photoresist layer, the photoresist layer being exposed to radiation on a first side and being in contact with a substrate or a layer above the substrate on a second side;
- and
- a barrier layer above the photoresist layer, the barrier layer being adjacent the first side of the photoresist layer and being translucent to the radiation, the barrier layer including silicon dioxide or silicon nitride.
An integrated circuit wafer, the wafer being used in the fabrication of integrated circuits, the wafer comprising:
- a photoresist layer above a top surface of a substrate, the photoresist layer being exposed to light;
- and
- a barrier layer directly above and in contact with the photoresist layer, the barrier layer being highly translucent to light at a wavelength less than 248 nm, the barrier layer including silicon dioxide or silicon nitride.
An integrated circuit wafer, the wafer comprising:
- a photoresist means for reacting with light;
- and
- a barrier means above the photoresist means for being adjacent the photoresist means and for preventing outgassing from the photoresist means, the barrier means including silicon dioxide layer or a silicon nitride layer, the barrier means being translucent to the light at a wavelength of less than 248 nm, the photoresist means being closer to a semiconductor substrate than the barrier means.
Dependencies are inferred from the claim text.