Method for fabricating a microelectromechanical bearing

A mold for fabricating a microelectromechanical bearing comprising:

• a substrate;
• a sacrificial layer disposed on said substrate having a top and bottom surface said bottom surface adjacent to said substrate, wherein said sacrificial layer comprises:
• a first sacrificial sublayer having a first etch rate;
• a second sacrificial sublayer located on said first sacrificial sublayer, wherein said first sacrificial layer is adjacent to said substrate and said second sacrificial layer is opposite said substrate, wherein said second sacrificial sublayer has a second etch rate that is greater than the first etch rate of the first sacrificial layer;
• and
• a hole extending from the top surface of the sacrificial layer through said second sacrificial layer to said first sacrificial layer toward the second surface of the sacrificial layer, and wherein a bottom surface of the hole adjacent to the bottom surface of said sacrificial substrate is concave;
• and
• a first layer of bearing material disposed in the hole of said sacrificial layer, wherein said sacrificial layer may be removed such that said first layer of bearing material forms a microelectromechanical bearing.

A mold for fabricating a microelectromechanical bearing comprising:

• a substrate;
• a sacrificial layer disposed on said substrate that defines a hole extending at least partially through said sacrificial layer, wherein said sacrificial layer comprises:
• a first sacrificial sublayer having a first etch rate;
• and
• a second sacrificial sublayer located on said first sacrificial sublayer, wherein said first sacrificial layer is adjacent to said substrate and said second sacrificial layer is opposite said substrate, wherein said second sacrificial sublayer has a second etch rate that is greater than the first etch rate of the first sacrificial layer, and wherein said hole extends through said second sacrificial layer to said first sacrificial layer;
• a first layer of bearing material disposed in the hole of said sacrificial layer, wherein said sacrificial layer may be removed such that said first layer of bearing material forms a microelectromechanical bearing;
• and
• a second layer of bearing material located on said sacrificial layer adjacent to and in contact with said first layer of bearing material, wherein said second layer of bearing material extends from said partial hole to form a beam connected to said first layer of bearing material to thereby form a beam and a microelectromechanical bearing.

A mold for fabricating a microelectromechanical bearing comprising:

• a substrate;
• a sacrificial layer disposed on said substrate that defines a hole extending at least partially through said sacrificial layer, wherein said sacrificial layer comprises:
• a first sacrificial sublayer having a first etch rate, wherein said first sacrificial sublayer comprises a thermal silicon oxide material;
• and
• a second sacrificial sublayer located on said first sacrificial sublayer, wherein said first sacrificial layer is adjacent to said substrate and said second sacrificial layer is opposite said substrate, wherein said second sacrificial sublayer has a second etch rate that is greater than the first etch rate of the first sacrificial layer, and wherein said hole extends through said second sacrificial layer to said first sacrificial layer;
• and
• a first layer of bearing material disposed in the hole of said sacrificial layer, wherein said sacrificial layer may be removed such that said first layer of bearing material forms a microelectromechanical bearing.

A mold for fabricating a microelectromechanical bearing comprising:

• a substrate;
• a sacrificial layer disposed on said substrate that defines a hole extending at least partially through said sacrificial layer, wherein said sacrificial layer comprises:
• a first sacrificial sublayer having a first etch rate;
• and
• a second sacrificial sublayer located on said first sacrificial sublayer, wherein said first sacrificial layer is adjacent to said substrate and said second sacrificial layer is opposite said substrate, wherein said second sacrificial sublayer has a second etch rate that is greater than the first etch rate of the first sacrificial layer, wherein said second sacrificial sublayer comprises a phosphorus silicate glass material, and wherein said hole extends through said second sacrificial layer to said first sacrificial layer;
• and
• a first layer of bearing material disposed in the hole of said sacrificial layer, wherein said sacrificial layer may be removed such that said first layer of bearing material forms a microelectromechanical bearing.