Cu/Sn/Pd activation of a barrier layer for electroless CU deposition
AssigneeAdvanced Micro Devices, Inc.
InventorSergey D. Lopatin
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Abstract
Provided herein is a method of utilizing electroless copper deposition to form interconnects in a semiconductor device. An opening is formed in a dielectric layer in the form of a trench, via or combination thereof, and a diffusion barrier layer is blanket deposited in the opening. Then, a contact displacement technique is used to form a seed layer on the diffusion barrier layer which includes copper, tin and palladium. Electroless deposition of copper is been undertaken to autocatalytically deposit copper on the activated barrier layer. The process continues to create a conformal, void free electroless copper deposition.
Claims11
A method of preparing a surface of a diffusion barrier layer for electroless deposition of copper thereon, comprising:
- subjecting the diffusion barrier layer to a contact displacement solution comprising copper, tin and palladium;
- and
- forming a seed layer comprising copper, tin and palladium on the diffusion barrier layer by contact displacement.
A method of preparing a surface of a diffusion barrier layer for electroless deposition of copper thereon, comprising:
- subjecting the diffusion barrier layer to a contact displacement solution comprising copper and palladium;
- and
- forming a seed layer comprising copper and palladium on the diffusion barrier layer by contact displacement.
A method of preparing a surface of a diffusion barrier layer for electroless deposition of copper thereon, comprising:
- subjecting the diffusion barrier layer to a contact solution comprising copper and tin;
- and
- forming a seed layer comprising copper and tin on the barrier layer surface by contact displacement.
Dependencies are inferred from the claim text.