Film formation method using sputtering and production method of photovoltaic element using same
AssigneeCanon Kabushiki Kaisha
InventorAkiya Nakayama
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Abstract
In a film formation method comprising introducing a sputtering gas into a film forming chamber and forming a film on a substrate therein, the partial pressure of H2O in an atmosphere inside the film forming chamber is controlled so as to satisfy prescribed conditions, thereby forming a reflective layer of a prescribed reflectance on the substrate, thereby providing a film formation method using sputtering and a production method of a photovoltaic element using the film formation method that attain stable good film formation even during long-time sputter film formation, can constantly form a reflective film with a desired reflectance, has excellent workability and durability, and constantly attain high photoelectric conversion efficiency.
Claims17
A film formation method using sputtering comprising introducing a sputtering gas into a film forming chamber and forming a film on a substrate therein, wherein the partial pressures of H2O at the beginning and completion of the film formation are each controlled from not less than 2.6×10−3 Pa, to no more than 6.7×10−3 Pa in an atmosphere inside the film forming chamber, thereby forming a reflective layer of a prescribed reflectance on the substrate.
A film formation method using sputtering comprising introducing a sputtering gas into a film forming chamber and forming a zinc oxide film on a substrate therein, wherein the partial pressures of H2O at the beginning and completion of the film formation are each controlled from not less than 2.6×10−3 Pa, to no more than 6.7×10−3 Pa in an atmosphere inside the film forming chamber.
Dependencies are inferred from the claim text.