Method for providing a low temperature curable gallium alloy for multichip module substrates
AssigneeGeorgia Tech Research Corporation
InventorsSwapan K. Bhattacharya, Daniel F. Baldwin
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Abstract
A system and method for providing via-hole filling for microelectronic interconnections, is disclosed. Gallium metal is melted and mixed with a measured amount of copper and nickel, thereby creating a gallium alloy. Via holes are drilled within a substrate and filled with the gallium alloy. Excess gallium alloy is removed from the substrate. The substrate, having the filled via-holes therein, is then cured within the temperature range of room temperature to approximately 200 degrees Celsius. The gallium alloy may also be used for printing interconnect lines on a board surface.
Claims10
A method of providing via-hole fills for microelectronic interconnections, comprising the steps of:
- melting a portion of gallium metal;
- mixing said melted gallium metal with a portion of nickel and a portion of copper to amalgamize said melted gallium metal, thereby creating a gallium alloy;
- drilling at least one via-hole within a stainless steel substrate;
- depositing a dielectric material on said substrate, including inside said via-hole;
- transferring said gallium alloy to said substrate to prepare for filling said via-hole;
- filling said via hole with said gallium alloy;
- and
- curing said substrate, having said gallium alloy filled via-hole therein.
Dependencies are inferred from the claim text.