Epitaxial growth substrate and a method for producing the same
AssigneeNGK Insulators, Ltd.
InventorsKeiichiro Asai, Tomohiko Shibata, Yukinori Nakamura
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Abstract
An AlxGayInzN(x+y+z=1,x,y,z≧0) film is epitaxially grown, for example to a thickness of about 1.0 μm, on a surface of a base material. A surface of the AlxGayInzN film opposing the base material is polished and thus, flattened to have a surface roughness Ra of less than 10 Å and a thickness of about 1.0 μm. A high crystallinity nitride film is interposed between the base material and the AlxGayInzN film.
Claims10
An epitaxial growth substrate comprising an aluminum-containing base material and an AlxGayInzN (x+y+z=1,x,y,z≧0) film, having first and second surfaces, positioned on the base material, said first surface being located proximate a surface of the base material and said second surface being positioned opposite said first ice and being flattened by polishing, said substrate further comprising a high crystallinity nitride film interposed between the base material and the AlxGayInzN film and being formed by nitriding the surface of the base material, said high crystallinity nitride film comprising aluminum nitride.
A method for producing an epitaxial growth substrate comprising the steps of:
- preparing an aluminum-containing base material;
- forming a high crystallinity nitride film on the base material by nitriding the surface of the base material, said high crystallinity nitride film comprising aluminum nitride;
- epitaxially growing an AlxGayInzN (x+y+z=1,x,y,z≧0) film, having first and second surfaces, on the high crystallinity nitride film, said first surface being located proximate a surface of said base material, and said second surface being positioned opposite said first surface;
- and
- polishing said second surface of the AlxGayInzN film to a flattened state.
Dependencies are inferred from the claim text.