Crystallogenesis method with magnetic field
AssigneeComissariat a l'Energie Atomique
InventorsThierry Duffar, Jean-Paul Garandet
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Abstract
A method for manufacturing a solid single crystal of an electrically conductive material by pulling from a molten mass of this material, the material presenting atom clusters at melt. The method includes: a melt stage so as to obtain a molten mass, the melt stage procuring a colder zone of the molten mass, from which the single crystal will be pulled, and a hotter zone having sufficient temperature to melt the atom clusters; a stage of application to the molten mass of a rotating magnetic field allowing the atom clusters to be displaced from the colder zone to the hotter zone; and a stage of growth by pulling of the single crystal after the atom clusters have been displaced from the colder zone to the hotter zone.
Claims14
A method for manufacturing a solid single crystal of an electrically conductive material by pulling from a molten mass of this material, the material presenting atom clusters at melt, the method comprising:
- a melt stage for forming said molten mass, the melt stage producing a colder zone of the molten mass, from which the single crystal will be pulled, and a hotter zone having sufficient temperature to melt the atom clusters;
- a stage for applying to the molten mass a rotating magnetic field allowing the atom clusters to be displaced from the colder zone to the hotter zone;
- and
- a stage for growing by pulling single crystal after the atom clusters have been displaced from the colder zone to the hotter zone, the single crystal being formed from an end of the molten mass located near the colder zone.
Dependencies are inferred from the claim text.