Apparatus for injecting and modifying gas concentration of a meta-stable species in a downstream plasma reactor

An apparatus for concurrently administering at least two gases into a plasma excitation region of a remote plasma enhanced chemical vapor deposition reactor, comprising:

• a chamber having at least one input port for gas delivery and a pedestal for securing a semiconductor wafer;
• a coaxial injector tube attached to said chamber, including:
• an outer tube for confining a first gas for plasma excitation and defining said plasma excitation region;
• RF coils wound around said outer tube and connected to an RF generator for exciting said plasma excitation region and generating plasma of said first gas;
• and,
• an inner tube within said outer tube, for delivery of a second gas through said plasma excitation region such that said second gas remains unexcited after traversing through said plasma region.

An apparatus for concurrently administering at least two gases into a plasma excitation region of a remote plasma enhanced chemical vapor deposition reactor, comprising:

• a chamber having at least one input port for gas delivery and a pedestal for securing a semiconductor wafer;
• a coaxial injector tube attached to said chamber, including:
• an outer tube for confining a first gas for plasma excitation and defining said plasma excitation region;
• and,
• an inner tube within said outer tube, for delivery of a second gas through said plasma excitation region such that said second gas remains unexcited after traversing through said plasma region, said inner tube comprising:
• a metal gas tube;
• a dielectric inner sleeve external to and axially concentric with said metal gas tube;
• a Faraday shield external to and axially concentric with said dielectric inner sleeve;
• and,
• a dielectric outer sleeve external to and axially concentric with said Faraday shield.

An apparatus for administering gas into a plasma excitation region of a remote plasma enhanced chemical vapor deposition reactor, comprising:

• a chamber having at least one input port for gas delivery and a pedestal for securing a semiconductor wafer;
• a coaxial injector tube having a top end and a bottom end, attached to said chamber at said bottom end, including:
• an outer tube confining a first gas for plasma excitation and defining said plasma excitation region;
• and,
• an inner tube within said outer tube, for delivery of a second gas through said plasma excitation region such that said second gas remains unexcited after traversing through said plasma excitation region;
• and,
• a contoured plate having a center hole, slideably attached to said coaxial injector tube through said center hole.