Method and apparatus for generating masks utilized in conjunction with dipole illumination techniques

An apparatus for generating complementary mask patterns for use in a multiple-exposure lithographic imaging process, said apparatus comprising:

• means for identifying horizontal critical features from a plurality of features forming a layout,
• means for identifying vertical critical features from said plurality of features, said vertical critical features extending in a direction orthogonal to said horizontal critical features,
• means for identifying interconnection areas, said interconnection areas comprising areas in which one of said horizontal critical features contacts another feature of said layout, and/or areas in which one of said vertical critical features contacts another feature of said layout,
• means for defining a set of primary parameters on the basis of the proximity of said plurality of features relative to one another,
• means for generating an edge modification plan for each interconnection area based on said primary parameters,
• means for generating a first shielding plan for said horizontal critical features on the basis of said primary parameters,
• means for generating a second shielding plan for said vertical critical features on the basis of said primary parameters,
• means for generating a first mask pattern by compiling said horizontal critical features, said second shield plan for said vertical critical features and said interconnection areas containing a horizontal critical feature modified by said edge modification plan, and
• means for generating a second mask pattern by compiling said vertical critical features, said first shield plan for said horizontal critical features and said interconnection areas containing a vertical critical feature modified by said edge modification plan.

A method of generating complementary mask patterns for use in a multiple-exposure lithographic imaging process, said method comprising the steps of:

• identifying horizontal critical features and vertical critical features from a plurality of features forming a layout, said vertical critical features extending in a direction orthogonal to said horizontal critical features,
• identifying interconnection areas, said interconnection areas comprising areas in which one of said horizontal critical features contacts another feature of said layout, and areas in which one of said vertical critical features contacts another feature of said layout,
• defining a set of primary parameters on the basis of the proximity of said plurality of features relative to one another,
• generating an edge modification plan for each interconnection area based on said primary parameters,
• generating a horizontal mask pattern by compiling said horizontal critical features, a first shield plan for said vertical critical features and said interconnection areas containing a horizontal critical feature modified by said edge modification plan, said first shield plan being defined by said primary parameters, and
• generating a vertical mask pattern by compiling said vertical critical features, a second shield plan for said horizontal critical features and said interconnection areas containing a vertical critical feature modified by said edge modification plan, said second shield plan being defined by said primary parameters.

An apparatus for generating complementary mask patterns for use in a multiple-exposure lithographic imaging process, said apparatus comprising:

• means for identifying horizontal critical features and vertical critical features from a plurality of features forming a layout, said vertical critical features extending in a direction orthogonal to said horizontal critical features,
• means for identifying interconnection areas, said interconnection areas comprising areas in which one of said horizontal critical features contacts another feature of said layout, and areas in which one of said vertical critical features contacts another feature of said layout,
• means for defining a set of primary parameters on the basis of the proximity of said plurality of features relative to one another,
• means for generating an edge modification plan for each interconnection area based on said primary parameters,
• means for generating a horizontal mask pattern by compiling said horizontal critical features, a first shield plan for said vertical critical features and said interconnection areas containing a horizontal critical feature modified by said edge modification plan, said first shield plan being defined by said primary parameters, and
• means for generating a vertical mask pattern by compiling said vertical critical features, a second shield plan for said horizontal critical features and said interconnection areas containing a vertical critical feature modified by said edge modification plan, said second shield plan being defined by said primary parameters.

A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded on the recording medium for directing the computer to generate files corresponding to complementary masks for use in a multiple-exposure lithographic imaging process, said generation of said files comprising the steps of:

• identifying horizontal critical features from a plurality of features forming a layout,
• identifying vertical critical features from said plurality of features, said vertical critical features extending in a direction orthogonal to said horizontal critical features,
• identifying interconnection areas, said interconnection areas comprising areas in which one of said horizontal critical features contacts another feature of said layout, and/or areas in which one of said vertical features contacts another feature of said layout,
• defining a set of primary parameters on the basis of the proximity of said plurality of features relative to one another,
• generating an edge modification plan for each interconnection area based on said primary parameters,
• generating a first shielding plan for said horizontal critical features on the basis of said primary parameters,
• generating a second shielding plan for said vertical critical features on the basis of said primary parameters,
• generating a first mask by compiling said horizontal critical features, said second shield plan for said vertical critical features and said interconnection areas containing a horizontal critical feature modified by said edge modification plan, and
• generating a second mask by compiling said vertical critical features, said first shield plan for said horizontal critical features and said interconnection areas containing a vertical critical feature modified by said edge modification plan.

A computer program product for controlling a computer comprising a recording medium readable by the computer, means recorded on the recording medium for directing the computer to generate files corresponding to complementary masks for use in a multiple-exposure lithographic imaging process, said generation of said files comprising the steps of:

• identifying horizontal critical features and vertical critical features from a plurality of features forming a layout, said vertical critical features extending in a direction orthogonal to said horizontal critical features,
• identifying interconnection areas, said interconnection areas comprising areas in which one of said horizontal critical features contacts another feature of said layout, and areas in which one of said vertical critical features contacts another feature of said layout,
• defining a set of primary parameters on the basis of the proximity of said plurality of features relative to one another,
• generating an edge modification plan for each interconnection area based on said primary parameters,
• generating a horizontal mask pattern by compiling said horizontal critical features, a first shield plan for said vertical critical features and said interconnection areas containing a horizontal critical feature modified by said edge modification plan, said first shield plan being defined by said primary parameters, and
• generating a vertical mask pattern by compiling said vertical critical features, a second shield plan for said horizontal critical features and said interconnection areas containing a vertical critical feature modified by said edge modification plan, said second shield plan being defined by said primary parameters.