Method for patterning a silicon-on-insulator photomask

A method for patterning a photomask to fabricate a silicon wafer having a plurality of embedded DRAMs (eDRAM), the method comprising the steps of:

• collecting array well (AW) shapes of said eDRAM;
• defining an AW electrical net formed by intersecting AW shapes;
• creating an AW shape for each of said AW electrical nets;
• collecting all n-wells of said eDRAM;
• respectively sorting said n-wells touching each of said AW shapes to define an n-band contact for each of said AW shapes;
• merging all of said touching n-band contacts;
• creating the least enclosing rectangle of said merged n-bands;
• and
• fabricating the photomask from said AW shapes of said AW electrical nets with said least enclosing rectangle of said merged n-bands.

A program storage device readable by a machine tangibly embodying a program of instructions executable by the machine to perform method steps for patterning a photomask to fabricate a silicon wafer having at least one embedded DRAM (eDRAM), the method steps comprising:

• collecting first shapes corresponding to a first set of electrical nets of said at least one eDRAM and second shapes corresponding to a second set of electrical nets of said at least one eDRAM;
• merging said first and second shapes into respective individual composite shapes;
• forming an enclosing rectangular envelope having the smallest possible area for each of said individual composite shapes;
• and
• fabricating the photomask with said enclosing rectangular envelopes.

A program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine to perform method steps for patterning a photomask to fabricate a silicon wafer having at least one embedded DRAM (eDRAM), the method steps comprising:

• collecting all eDRAM AW shapes corresponding to individual AW electrical nets and all n-well shapes respectively touching said AW electrical nets;
• merging selected ones of said AW shapes and said n-well shapes into respective individual composite shapes;
• and
• fabricating the photomask with said respective individual composite shapes.