Computer simulation method for semiconductor device
AssigneeNEC Electronics Corporation
InventorShigetaka Kumashiro
Life of this patent
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Abstract
In a computer simulation method for a semiconductor device, temporal changes in internal physical quantities such as electrostatic potential, electron density, and hole density in a semiconductor device upon application of a pulse voltage are obtained by transient analysis. AC signal analysis is performed by inputting a small RF AC voltage, assuming various physical quantities obtained at each time are in a pseudo steady state. The junction capacitance in the semiconductor device is calculated. These steps are repeatedly performed until a predetermined analysis time is reached to obtain transient temporal changes in junction capacitance.
Claims2
A method of simulating a transient response of junction capacitance in a semiconductor device, comprising the steps of:
- determining by transient analysis a temporal change of an internal physical quantity of the semiconductor device upon application of a pulse voltage to the semiconductor device, the internal physical quantity being one of electro-static potential, electron density, and hole density;
- determining a complex amplitude of an AC response component of the internal physical quantity by applying an RF voltage to the semiconductor device and conducting small-AC-signal analysis, assuming that the internal physical quantity is in a steady state;
- calculating junction capacitance in the semiconductor device from the determined complex amplitude;
- repeating the above steps until the transient analysis is complete;
- and
- outputting a result that simulates the transient response of junction capacitance of the semiconductor device.
Dependencies are inferred from the claim text.