MOSFET simulation method

A MOSFET simulation method for calculating a characteristic value of a MOSFET to be simulated, comprising the steps of:

• (a) inputting simulation conditions including various physical and operational parameters of said MOSFET, said physical parameters including an impurity concentration N of said MOSFET and said operational parameters including a temperature T, a vertical electric field Ev, and a substrate voltage Vb ascribed to said MOSFET;
• (b) numerically calculating an electric potential ψ, an electron density n, a hole density p, and carrier mobility μ inside said MOSFET from initial values thereof and said simulation conditions, and
• (c) using said electric potential ψ, said electron density n, said hole density p, and said carrier mobility μ to determine said characteristic value,
• wherein step (b) comprises calculating said carrier mobility μ from the following equation:
• μ(N, T, Ev, Vb)=μ0(N, T, Ev)+μ1(Vb);
• and
• wherein step (b) further comprises calculating said electric potential ψ, said electron density n, said hole density p using said carrier mobility μ by solving the following system of simultaneous equations:
• Poisson's equation,
• div(−εgrad(ψ))=q(p−n+Nd−Na),
• Equation of continuity of electrons,
• div(Jn)=q(R−G),
• Equation of continuity of holes,
• div(Jp)=−q(R−G),
• Electron transport equation,
• Jn=−q*(μn*n*grad(ψ)−Dn*grad(n)), and
• Hole transport equation,
• Jp=−q*(μp*p*grad(ψ)+Dp*grad(p)),
• where ε is a permittivity of a medium, Nd is a donor density, Na is an acceptor density, R is a carrier re-coupling amount, G is a carrier generation amount, μn is an electron mobility, μp is a hole mobility, Dn is an electron diffusion coefficient, Dp is a hole diffusion coefficient, Jn is an electron current density, Jp is a hole current density, and q is a unit electric charge.