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US 6,553,157 B2Granted
Optoelectronic microelectronic system
AssigneeInfineon Technologies AG
InventorsThomas Schultz, Wolfgang Rösner, Lothar Risch
Life of this patent
Estimating the term…
Abstract
In an integrated optoelectronic microelectronic system, an optoelectronically active diode part is formed in a semiconductor substrate by zones forming depletion layers. The system is provided in a mesa that stands vertically on a semiconductor substrate and runs in a direction of extension thereof. A light waveguide is optically coupled to the diode part in such a way that light is coupled into the diode part via the mesa side wall.
Claims8
An optoelectronic microelectronic system, comprising:
- a semiconductor substrate having a surface;
- a doped well formed in said semiconductor substrate and having a given conductivity type and a surface;
- a mesa having a side wall and extending out vertically from said semiconductor substrate, said mesa having a part with said given conductivity type and an equivalent doping concentration as said doped well;
- an integrated photodiode having an optoelectronically active part formed by doping regions that form depletion layers, and disposed partly in said mesa and partly in said doped well;
- and
- an integrated light waveguide disposed on said doped well and surrounding said mesa so that light is coupled into said optoelectronically active part both through said side wall of said mesa and also through said surface of said doped well.
3 more elements
An optoelectronic microelectronic system, comprising:
- a vertical MOS field-effect transistor containing:
- a semiconductor substrate having a surface;
- a well having a first conductivity type and formed in said semiconductor substrate, said well having a surface;
- a mesa extending out from said semiconductor substrate in a region of said well, said mesa having a part with said first conductivity type;
- a first doping region having a second conductivity type opposite to said first conductivity type and disposed on said surface of said well;
- a second doping region having said second conductivity type and disposed on an end of said mesa facing away from said semiconductor substrate;
- and
- a spacer formed of silicon and disposed on a side wall of said mesa and insulated against said part of said mesa.
5 more elements
Dependencies are inferred from the claim text.