Semiconductor laser device with an inspection window, and an inspection method therefor
AssigneeCanon Kabushiki Kaisha
InventorShigemitsu Shiba
Life of this patent
Estimating the term…
Abstract
A semiconductor laser device having a chip electrode of a semiconductor laser is provided. The laser device includes a first electrode layer of a first material, and a second electrode layer of a second material. The second electrode layer has an opening corresponding to a light-emitting section of the laser, and is formed on a face of the first electrode layer. The first material of the first electrode layer is different than the second material of the second electrode layer.
Claims13
A semiconductor laser device comprising:
- a laser diode chip;
- a first electrode layer of a first material not having an opening;
- and
- a second electrode layer of a second material having an opening corresponding to a light-emitting section of the laser diode chip, said second electrode layer being formed in contact with a face of said first electrode layer and the first material of said first electrode layer being different than the second material of said second electrode layer,
- wherein said first and second electrode layers connect said laser diode chip with a power source.
A semiconductor laser device, comprising:
- a laser diode chip having a light emitting section;
- a first electrode layer of a first material formed on a face of said laser diode chip, said first electrode layer not having an opening;
- and
- a second electrode layer of a second material formed in contact with a face of said first electrod layer and having an opening corresponding to the light-emitting section of the laser diode chip the first material of said first electrode layer being different than the second material of said second electrode layer,
- wherein said first and second electrode layers connect said laser diode chip with a power source.
A method for forming a viewable semiconductor device comprising the step of:
- providing a laser diode chip;
- providing a first electrode layer of a first material;
- and
- providing a second electrode layer of a second material having an opening corresponding to a light-emitting section of the laser diode chip, the second electrode layer being provided in contact with a face of the first electrode layer and the first material of the first electrode layer being different than the second material of the second electrode layer,
- wherein the first and second electrode layers are provided in a manner to provide an elecrical connection between the laser diode chip and a power source.
A method of forming a semiconductor laser device, comprising the steps of:
- providing a laser diode chip having a light emitting section;
- providing a first electrode layer of a first material formed on a face of the laser diode chip and not having an opening;
- and
- providing a second electrode layer of a second material formed in contact with a face of the first electrode layer and having an opening corresponding to the light-emitting section of the laser diode chip, the first material of the first electrode layer being different than the second material of the second electrode layer,
- wherein the first and second electrode layers are provided in a manner to provide an electrical connection between the laser diode chip and a power source.
Dependencies are inferred from the claim text.