Method for storing a temperature threshold in an integrated circuit, method for storing a temperature threshold in a dynamic random access memory, method of modifying dynamic random access memory operation in response to temperature, programmable temperature sensing circuit and memory integrated circuit

A method of modifying dynamic random access memory operation in response to temperature comprising:

• comparing a measured operating temperature of the memory to a temperature threshold stored in a nonvolatile memory, where the temperature threshold was previously stored by blowing fusable devices in the nonvolatile memory;
• reducing a data input/output rate for the memory when the measured operating temperature exceeds the temperature threshold;
• and
• maintaining the data input/output rate for the memory when the measured operating temperature does not exceed the temperature threshold.

A method of modifying dynamic random access memory operation in response to temperature comprising:

• comparing a measured operating temperature of the memory to a temperature threshold stored in a nonvolatile memory, where the temperature threshold was previously stored by blowing fusable devices in the nonvolatile memory;
• setting a data input/output rate for the memory to a first rate when the measured operating temperature exceeds the temperature threshold;
• and
• setting the data input/output rate for the memory to a second rate when the measured operating temperature does not exceed the temperature threshold.

An apparatus configured to store a temperature threshold in an integrated circuit comprising:

• a tester configured to measure operating parameters of the integrated circuit versus temperature;
• a computer configured to determine a maximum temperature at which the integrated circuit performance exceeds a predetermined specification;
• and
• a data storage device configured to store parameters corresponding to the maximum temperature in the integrated circuit by selectively blowing antifuses.