Magnetic random-access memory

A magnetic random-access memory comprising:

• a semiconductor substrate on which a first word line and a bit line intersecting each other are arranged;
• a tunneling magnetoresistive element formed in an area of intersection of the first word line and the bit line by stacking a first magnetic substance layer whose magnetization direction is variable, a second magnetic substance layer whose magnetization direction is fixed and an insulator layer placed between the first and second magnetic substance layers;
• and
• an access transistor which uses as a gate a second word line extending in a direction intersecting the bit line;
• wherein the tunneling magnetoresistive element is located in an area of intersection of the second word line and the bit line, and the second word line acts also as the first word line.

A magnetic random-access memory comprising:

• a semiconductor substrate on which a first word line and a bit line intersecting each other are arranged;
• a tunneling magnetoresistive element formed in an area of intersection of the first word line and the bit line by stacking a first magnetic substance layer whose magnetization direction is variable, a second magnetic substance layer whose magnetization direction is fixed and an insulator layer placed between the first and second magnetic substance layers;
• and
• an access transistor which uses as a gate a second word line extending in a direction intersecting the bit line;
• wherein the first and second word lines are electrically connected to each other.

A magnetic random-access memory comprising:

• a semiconductor substrate on which a word line and a bit line intersecting each other are arranged;
• a tunneling magnetoresistive element formed in an area of intersection of the word line and the bit line by stacking a first magnetic substance layer whose magnetization direction is variable, a second magnetic substance layer whose magnetization direction is fixed and an insulator layer placed between the first and second magnetic substance layers;
• and
• a diode having a pn junction and connected to the tunneling magnetoresistive element;
• wherein data stored in the tunneling magnetoresistive element is read by flowing an electric current from the bit line through the diode.

A magnetic random-access memory comprising:

• a semiconductor substrate on which a word line and a bit line intersecting each other are arranged;
• a tunneling magnetoresistive element formed in an area of intersection of the word line and the bit line by stacking a first magnetic substance layer whose magnetization direction is variable, the bit line acting as a second magnetic substance layer whose magnetization direction is fixed and an insulator layer placed between the first and second magnetic substance layers;
• and
• a diode having a pn junction and connected to the tunneling magnetoresistive element;
• wherein data stored in the tunneling magnetoresistive element is read by flowing an electric current from the bit line through the diode.