Method of reading a four-transistor memory cell array
AssigneeHewlett-Packard Development Company, L.P.
InventorRobert J Brooks
Life of this patent
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Abstract
A pair of cross-coupled inverters that hold a digital state are powered by supplies that also function as row select and column bit lines. A method of reading and writing the digital state of an individual cell, row of cells, or column of cells by manipulating these row-supply or column-supply lines. Reads and writes may be performed on either a row or column basis. A method for reading and logically OR'ing or AND'ing an entire row or column of cells. A method for querying on a row or column basis to function as a content addressable memory (CAM).
Claims31
A method of reading a memory array, comprising:
- creating a voltage differential between a first row-supply line and a second row-supply line;
- and,
- sensing a current on at least one column-supply line.
A method of reading a memory array, comprising:
- driving a voltage differential between a first supply line and a second supply line wherein said first supply line is connected to a first inverter in a plurality cells of a row and said second supply line is connected to a second inverter in a plurality of cells of said row thereby causing a first current to flow between said first supply line and at least a third supply line when a cell of said plurality of cells in said row is in a first state;
- and,
- detecting said first current flow.
A method of reading a memory array, comprising:
- supplying a first supply line and a second supply line with an operating voltage;
- supplying a voltage differential between said first supply line and said second supply line that is at least a threshold voltage of a field-effect transistor in magnitude thereby causing at least one cell to conduct a detectable amount of current between said first supply line and a third supply line;
- and,
- detecting said detectable amount of current.
A method of reading a memory array, comprising:
- creating a voltage differential between a first column-supply line and a second column-supply line;
- and,
- sensing a current on at least one row-supply line.
A method of reading a memory array, comprising:
- driving a voltage differential between a first supply line and a second supply line wherein said first supply line is connected to a first inverter in a plurality cells of a column and said second supply line is connected to a second inverter in a plurality of cells of said column thereby causing a first current to flow between said first supply line and at least a third supply line when a cell of said plurality of cells in said column is in a first state;
- and,
- detecting said first current flow.
Dependencies are inferred from the claim text.