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US 6,552,599 B1Granted
Diode circuit with ideal diode characteristic
AssigneeInfineon Technologies AG
InventorChihao Xu
Life of this patent
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Abstract
A circuit configuration produces an at least approximately ideal diode characteristic on the basis of a diode. A power MOSFET has a control path connected in parallel with the diode, a load path forming connection terminals of the ideal diode, and a gate connection to which a predetermined voltage potential is applied, for turning on the power MOSFET in the forward-bias direction of the diode and turning off the power MOSFET in the reverse-bias direction.
Claims9
A circuit configuration, comprising:
- at least two voltage supply terminals for receiving a supply voltage;
- a series circuit connected between said voltage supply terminals, said series circuit including a diode having a forward-bias direction and a reverse-bias direction and a Zener diode connected in series with said diode;
- a power MOSFET having:
- a gate connected to said series circuit, and
- a source and a drain defining a load path,
- said drain being directly connected to said series circuit;
- and
- at least one switch connected in series with the load path;
- said Zener diode having a cathode coupled to said gate of said power MOSFET.
6 more elements
Dependencies are inferred from the claim text.