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US 6,552,597 B1Granted
Integrated circuit with closely coupled high voltage output and offline transistor pair
AssigneePower Integrations, Inc.
InventorDonald Ray Disney
Life of this patent
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Abstract
An integrated circuit fabricated in a single silicon substrate includes a high-voltage output transistor having source and drain regions separated by a channel region, and a gate disposed over the channel region. Also included is an offline transistor having source and drain regions separated by a channel region and a gate disposed over the channel region of the offline transistor. A drain electrode is commonly coupled to the drain region of the high-voltage output transistor and to the drain region of the offline transistor.
Claims32
An integrated circuit (IC) in a substrate comprising:
- a high-voltage output transistor having source and drain regions separated by a channel region, and a gate disposed over the channel region;
- an offline transistor having source and drain regions separated by a channel region and a gate disposed over the channel region of the offline transistor, the offline transistor having a first breakdown voltage and the high-voltage output transistor having a second breakdown voltage, the first breakdown voltage being higher than the second breakdown voltage;
- a drain electrode commonly coupled to the drain region of the high-voltage output transistor and the drain region of the offline transistor;
- wherein the high-voltage output transistor and the offline transistor have the same conductivity type.
1 more element
A power device comprising:
- an integrated circuit (IC) in a substrate that includes:
- a high-voltage output transistor having source and drain regions separated by a channel region, and a gate disposed over the channel region;
- an offline transistor having source and drain regions separated by a channel region and a gate disposed over the channel region of the offline transistor, the offline transistor having a first breakdown voltage and the high-voltage output transistor having a second breakdown voltage, the first breakdown voltage being higher than the second breakdown voltage;
- a drain electrode commonly coupled to the drain region of the high-voltage output transistor and the drain region of the offline transistor;
- wherein the high-voltage output transistor and the offline transistor have the same conductivity type;
- and
- a package housing the integrated circuit, the package having a first pin connected to the drain electrode.
4 more elements
A circuit comprising:
- an integrated circuit (IC) in a substrate that includes:
- a high-voltage output transistor having source and drain regions separated by a channel region, and a gate disposed over the channel region;
- an offline transistor having source and drain regions separated by a channel region, and a gate disposed over the channel region of the offline transistor, the offline transistor having a first breakdown voltage and the high-voltage output transistor having a second breakdown voltage, the first breakdown voltage being higher than the second breakdown voltage;
- a drain electrode commonly coupled to the drain region of the high-voltage output transistor and the drain region of the offline transistor;
- wherein the high-voltage output transistor and the offline transistor have the same conductivity type;
- a package housing the IC, the package having a first pin connected to the drain electrode;
- a supply line;
- and
- a load coupled between the supply line and the first pin of the package.
6 more elements
An integrated circuit fabricated on a substrate comprising:
- a high-voltage output MOSFET having interdigitated source and drain regions separated by a channel region, and a gate disposed over the channel region;
- an offline transistor having interdigltated source and drain regions separated by a channel region, and a gate disposed over the channel region of the offline transistor, the drain region of the offline transistor being disposed in a first well region and the drain region of the high-voltage transistor being disposed in a second well region, the source regions of the high-voltage output and offline transistors are disposed in a common body region of the substrate interposed between the first and second well regions, the offline transistor having a first breakdown voltage and the high-voltage output transistor having a second breakdown voltage, the first breakdown voltage being higher than the second breakdown voltage;
- a drain electrode commonly coupled to the drain region of the high-voltage output transistor and the drain region of the offline transistor;
- wherein the high-voltage output transistor and the offline transistor have the same conductivity type.
1 more element
An integrated circuit (IC) in a substrate comprising:
- an output node;
- a high-voltage output transistor having source and drain regions separated by a channel region, and a gate disposed over the channel region;
- an offline transistor having source and drain regions separated by a channel region and a gate disposed over the channel region of the offline transistor, the offline transistor having a first breakdown voltage and the high-voltage output transistor having a second breakdown voltage, the first breakdown voltage being higher than the second breakdown voltage;
- a drain electrode connected to the output node and commonly coupled to the drain region of the high-voltage output transistor and the drain region of the offline transistor;
- wherein the high-voltage output transistor and the offline transistor have the same conductivity type.
2 more elements
Dependencies are inferred from the claim text.