A method of measuring electrical characteristics of a semiconductor device using a prober having a sharp probe for electrical measurement, comprising the steps of:
- causing the sharp probe to scan on the nm order near a surface of the semiconductor device while supplying a signal onto the surface of the semiconductor device to detect data of the signal,
- positioning said probe, based on the detected data, at a semiconductor surface approach position corresponding to a desired position on the semiconductor surface,
- driving said probe downward in the z-axis direction toward the semiconductor surface until an abnormal increase in current flowing through said probe indicating that the probe is in electrical contact with the semiconductor surface,
- applying a voltage to said probe with the probe in electrical contact with the semiconductor surface to directly measure at least one of current and voltage in the semiconductor device at the desired position.