Back to results
US 6,552,431 B2Granted
Semiconductor structure with a titanium aluminum nitride layer and method for fabricating same
AssigneeMicron Technology, Inc.
InventorsScott G. Meikle, Sung Kim
Life of this patent
Estimating the term…
Abstract
A semiconductor device having a contact layer and a diffusion barrier layer is fabricated by preparing a semiconductor substrate, forming a layer of titanium/aluminum alloy on the surface of the substrate, and then heating the resultant structure in a nitrogen ambient to form a contact layer of titanium silicide interposed between the substrate and a diffusion barrier layer consisting of titanium/aluminum/nitride.
Claims28
A semiconductor device comprising:
- a contact layer comprising a suicide;
- and
- a diffusion barrier layer adjacent to the contact layer, the diffusion barrier layer comprising aluminum, nitride, and a refractory metal, the aluminum comprising approximately 1% to 25% of the diffusion barrier layer.
A semiconductor device comprising:
- a contact layer comprising a silicide;
- and
- a diffusion barrier layer adjacent to the contact layer, the diffusion barrier layer comprising aluminum, nitride, and a refractory metal, the refractory metal comprising approximately 25% to 55% of the diffusion barrier layer.
A semiconductor device comprising:
- a contact layer comprising a silicide;
- and
- a diffusion barrier layer adjacent to the contact layer, the diffusion barrier layer comprising aluminum, approximately 40% to 55% nitrogen, and a refractory metal.
A semiconductor device comprising:
- a contact layer having a thickness and comprising a silicide;
- and
- a diffusion barrier layer adjacent to the contact layer, the diffusion barrier layer having a thickness that is between approximately 1% and 20% of the thickness of the contact layer and comprising aluminum, nitride, and a refractory metal.
A semiconductor device comprising:
- a semiconductor layer;
- a contact layer having a thickness and comprising a suicide and being disposed adjacent to the semiconductor layer;
- and
- a diffusion barrier layer comprising aluminum, nitrogen, and a refractory metal, the diffusion barrier layer being disposed adjacent to the contact layer and having a thickness that is between approximately 1% and 20% of the thickness of the contact layer.
1 more element
A semiconductor device comprising:
- a semiconductor layer;
- an intermediate layer having a thickness and comprising titanium silicide and being disposed over the semiconductor layer;
- and
- a barrier layer comprising titanium, aluminum, and nitrogen, the barrier layer having a thickness that is between approximately 1% and 20% of the thickness of the intermediate layer and being disposed over the intermediate layer, the intermediate layer being disposed between the semiconductor layer and the barrier layer.
1 more element
A semiconductor device comprising:
- a silicon structure;
- a diffusion barrier layer having a thickness and comprising aluminum, nitrogen, and a refractory metal;
- and
- a contact layer comprising a silicide of the refractory metal and being disposed over the silicon structure, the contact layer having a thickness that is between approximately 500% and 600% of the thickness of the diffusion barrier layer and being disposed between the silicon structure and the diffusion barrier layer.
1 more element
A semiconductor device comprising:
- a contact layer having a thickness and comprising titanium suicide;
- and
- a diffusion barrier layer adjacent to the contact layer, the diffusion barrier layer having a thickness that is between approximately 1% and 20% of the thickness of the contact layer and comprising aluminum, nitride, and titanium.
A semiconductor device comprising:
- a contact layer having a thickness and comprising tungsten suicide;
- and
- a diffusion barrier layer adjacent to the contact layer, the diffusion barrier layer having a thickness that is between approximately 1% and 20% of the thickness of the contact layer and comprising aluminum, nitride, and tungsten.
A semiconductor device comprising:
- a contact layer having a thickness and comprising tantalum silicide;
- and
- a diffusion barrier layer adjacent to the contact layer, the diffusion barrier layer having a thickness that is between approximately 1% and 20% of the thickness of the contact layer and comprising aluminum, nitride, and tantalum.
A semiconductor device comprising:
- a semiconductor substrate;
- a contact layer having a thickness and comprising titanium suicide and being disposed adjacent to the semiconductor substrate;
- and
- a diffusion barrier layer comprising aluminum, nitrogen, and titanium, the diffusion barrier layer being disposed adjacent to the contact layer and having a thickness that is between approximately 1% and 20% of the thickness of the contact layer.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- a contact layer having a thickness and comprising tungsten silicide and being disposed adjacent to the semiconductor substrate;
- and
- a diffusion barrier layer comprising aluminum, nitrogen, and tungsten, the diffusion barrier layer being disposed adjacent to the contact layer and having a thickness that is between approximately 1% and 20% of the thickness of the contact layer.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- a contact layer having a thickness and comprising tantalum silicide and being disposed adjacent to the semiconductor substrate;
- and
- a diffusion barrier layer comprising aluminum, nitrogen, and tantalum, the diffusion barrier layer being disposed adjacent to the contact layer and having a thickness that is between approximately 1% and 20% of the thickness of the contact layer.
1 more element
A semiconductor device comprising:
- a semiconductor substrate;
- an annealed contact layer having a thickness and comprising titanium silicide and being disposed adjacent to the semiconductor substrate;
- and
- an annealed diffusion barrier layer comprising aluminum, nitrogen, and titanium, the diffusion barrier layer being disposed adjacent to the contact layer and having a thickness that is between approximately 1% and 20% of the thickness of the contact layer.
1 more element
Dependencies are inferred from the claim text.