US 6,552,426 B2Granted

Semiconductor device and method of manufacturing same

AssigneeSharp Kabushiki Kaisha

InventorsToshiya Ishio, Hiroyuki Nakanishi, Katsunobu Mori

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Abstract

The present invention provides a quality and reliable high-density package (Chip Size Package) semiconductor device without problems related to the manufacturing process. The semiconductor device includes the first semiconductor substrate piece having electrode pads formed on its principle surface, and a second semiconductor mounting piece mounted thereon via a first insulating film and a die-attaching material. On the surface opposite the first semiconductor substrate piece of the second semiconductor substrate piece, formed are wiring patterns and a second insulating film for protecting the wiring patterns. The wiring patterns include electrode pads, wires, and lands where external connection terminals are provided.

Claims9

Dependent claims

A semiconductor device, comprising:

a first semiconductor substrate piece having active elements and electrodes formed on its principal surface;
at least one semiconductor substrate mounting piece made of a same material as said first semiconductor substrate piece, said mounting semiconductor substrate being mounted on the principle surface side of said first semiconductor substrate piece within a dimension of said first semiconductor substrate piece, to be fitted within the principal surface,
wiring patterns including electrodes, formed on a surface of a semiconductor substrate mounting piece in a top layer of said at least one semiconductor substrate mounting piece;
external connection terminals formed on said wiring patterns;
and
conductors for connecting the electrodes formed on said first semiconductor substrate piece and the electrodes formed on said semiconductor substrate mounting piece in the top layer.

3 more elements

Dependencies are inferred from the claim text.