Resin-encapsulated semiconductor device

A resin-encapsulated semiconductor device, comprising:

• a die pad having two opposing die bond surfaces,
• two semiconductor chips each die-bonded to each of the die bond surfaces, and having a thickness of at most 150 μm provided with electrodes on a centerline in the center of an upper surface thereof,
• metal wires each wire-bonded to each of electrodes of each of the semiconductor chips,
• a plurality of inner leads provided in the close proximity to a pair of opposing ends of the die pad along the electrode arrangement of the semiconductor chip and to which each of the metal wires connected to the surface in the vicinity of the inner end thereof, and
• a encapsulation resin with which the semiconductor chips, the die pad, the metal wires and the inner leads are encapsulated.

A resin-encapsulated semiconductor device comprising;

• a die pad having first and second die bond surface opposing each other,
• a first semiconductor chip die-bonded on the first die bond surface and having a plurality of electrodes on a centerline at the center of upper surface thereof,
• first metal wires each connected to each electrode of the first semiconductor chip,
• a second semiconductor chip die-bonded on the second die bond surface and having a plurality of electrodes at an end of lower surface thereof,
• second metal wires each connected to each electrode of the second semiconductor chip, and
• a plurality of inner leads arranged near an end of the die pad, wherein
• the plurality of inner leads each has a first portion positioned on the substantially same plane as the die pad and has a first surface to which each of the second metal wires is wire-bonded,
• the plurality of inner leads each also has a second portion disposed on the plane positioned above the die pad and has a second surface to which each of the first metal wires is wire-bonded,
• the first and second surfaces are substantially parallel to the first and second die bond surface and
• each of the second surface is positioned above the upper surface of the first semiconductor chip by a prescribed size.

A resin-encapsulated semiconductor device comprising;

• a die pad having a die bond surface,
• a first semiconductor chip die-bonded on the die bond surface and having a plurality of electrodes at an end of upper surface thereof,
• first metal wires each connected to each electrode of the first semiconductor chip,
• a second semiconductor chip bonded on the upper surface of the first semiconductor chip and having a plurality of electrodes on a centerline at the center of upper surface of the second semiconductor chip,
• second metal wires each connected to each electrode of the second semiconductor chip, and
• a plurality of inner leads arranged near an end of the die pad, wherein
• the plurality of inner leads each has a first portion positioned on the substantially same plane as the die pad and has a first surface to which each of the first metal wires is wire bonded,
• plurality of inner leads each also has a second portion disposed on the plane positioned above the die pad and has a second surface to which each of the second metal wires is wire-bonded,
• the first and second surfaces are substantially parallel to the die bond surface and each of the second surface is positioned above the upper surface of the first semiconductor chip by a prescribed size.

A resin-encapsulated semiconductor device comprising;

• a die pad having first and second die bond surface opposing each other,
• a first semiconductor chip die bonded on the first die bond surface and having a plurality of electrodes on a centerline at the center of upper surface thereof,
• first metal wires each connected to each electrode of the first semiconductor chip,
• a second semiconductor chip die-bonded on the second die bond surface and having a plurality of electrodes on a centerline at the center of lower surface thereof,
• second metal wires each connected to each electrode of the second semiconductor chip, and
• a plurality of inner leads arranged near an end of the die pad, wherein
• the plurality of inner leads each has a first portion disposed on the plane positioned above the die pad and has a first surface to which each of the first metal wires is wire-bonded,
• the plurality of inner leads each also has a second portion disposed on the plane positioned below the die pad and has a second surface to which each of the second metal wires is wire-bonded,
• the first and second surfaces are substantially parallel to the first and second die bond surface and
• the first surface is positioned above the upper surface of the first semiconductor chip and the second surface is positioned below the lower surface of the second semiconductor chip, by a prescribed size respectively.

A resin-encapsulated semiconductor device comprising;

• a die pad having first and second die bond surface opposing each other,
• a first semiconductor chip die-bonded on the first die bond surface and having a plurality of electrodes at an end of upper surface thereof,
• first metal wires each connected to each electrode of the first semiconductor chip,
• a second semiconductor chip die-bonded on the second die bond surface and having a plurality of electrodes on a centerline at the center of lower surface thereof,
• second metal wires each connected to each electrode of the second semiconductor chip,
• a plurality of first inner leads arranged on an end of the die pad near the plurality of electrodes of the first semiconductor chip and
• a plurality of second inner leads arranged on an other end of the die pad, wherein
• the plurality of the first inner leads each positioned substantially same plane as the die pad and has a first surface to which each of the first metal wires is wire-bonded,
• the plurality of second inner leads each has first and second portions,
• the first portion of each of the second inner leads positioned substantially same plane as the die pad,
• the second portion of each of the second inner leads disposed on the plane positioned below the die pad and has a second surface to which each of the second metal wires is wire-bonded,
• the first and second surfaces are substantially parallel to the first and second die bond surface,
• the second surface is positioned below the lower surface of the second semiconductor chip by a prescribed size.

A resin-encapsulated semiconductor device comprising;

• a die pad having a die bond surface,
• a first semiconductor chip die-bonded on the die bond surface and having a plurality of electrodes at an end of upper surface thereof,
• first metal wires each connected to each electrode of the first semiconductor chip,
• a second semiconductor chip bonded on the upper surface of the first semiconductor chip and having a plurality of electrodes on a centerline at the center of the upper surface of the second semiconductor chip,
• second metal wires each connected to each electrode of the second semiconductor chip,
• a plurality of first inner leads arranged on an end of the die pad near the plurality of electrodes of the first semiconductor chip and
• a plurality of second inner leads arranged on an other end of the die pad, wherein the plurality of the first inner leads each positioned substantially same plane as the die pad and has a first surface to which each of the first metal wires is wire-bonded,
• the plurality of the second inner leads each has first and second portions,
• the first portion of each of the second inner leads positioned substantially same plane as the die pad,
• the second portion of each of the second inner leads positioned above the die pad and has a second surface to which each of the second metal wires is wire-bonded,
• the first and second surfaces are substantially parallel to the die bond surface,
• the second surface is positioned above the upper surface of the second semiconductor chip by a prescribed size.