Semiconductor device with quantum-wave interference layers

A semiconductor device comprising:

• an n-layer with n-type conduction;
• a p-layer with p-type conduction;
• a negative electrode contacting said n-layer;
• a positive electrode contacting said p-layer and applied with a positive voltge relative to said negative electrode;
• quantum-wave interference layer units having plural periods of a pair of a first layer and a second layer, said second layer having a wider band gap than said first layer;
• a middle layer disposed between adjacent two of said quantum-wave interference layer units;
• and
• wherein the thickness of said first layer (DW) is equal to nWλW/4, where nW is an odd number and λW is a quantum-wave wavelength of carriers injected in the first layer;
• the thickness of said second layer (DB) is equal to nBλB/4, where nB is an odd number and λB is a quantum-wave wavelength of carriers injected in the second layer;
• the carriers in said first and second layers are selected from the group consisting of electrons and holes,
• said middle layer does not have a multi-period structure but has a plane structure in a band structure, wherein said quantum-wave interference layer units and the middle layer are connected in series,
• wherein a kinetic energy of said carriers which determines said quantum-wave wavelength is set at a level near the bottom of a conduction band or a valence band of said second layer, according to the case that said carriers are electrons and holes, respectively,
• wherein said quantum-wave wavelength λW in said first layer is equal to h/[2mW(E+V)]½, said quantum-wave wavelength λB in said second layer is equal to h/(2mBE)½, where h, mW, mB, E, V, represent Plank's constant, an effective mass of said carrier in said first layer, an effective mass of said carrier in said second layer, a kinetic energy of carriers flowing into said second layer, a potential energy of said second layer to said first layer, respectively.