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US 6,552,411 B2Granted
DC or AC electric field assisted anneal
AssigneeInternational Business Machines Corporation
InventorsArne W. Ballantine, John J. Ellis-Monaghan, Toshihura Furukawa, Jeffrey D. Gilbert, Glenn R. Miller, James A. Slinkman
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Abstract
A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at least one dopant while simultaneously exposing the semiconductor substrate to an electric field.
Claims21
A device for forming a desired junction profile in a semiconductor substrate, the device comprising:
- a means for annealing a semiconductor substrate in which at least one dopant has been diffused, the annealing means comprising at least one heat source;
- and
- means for producing a DC or AC electrical field and exposing the semiconductor substrate to the DC or AC electrical field simultaneous with the annealing.
Dependencies are inferred from the claim text.