SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks
AssigneeInternational Business Machines Corporation
InventorSteven Howard Voldman
Life of this patent
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Abstract
An SiGe device configured to exhibit high velocity saturation resistance characteristic for buffering large voltages at low currents, wherein for circuit applications, the SiGe device is connected in series with a circuit element for protection of the circuit element. Advantageously, the device may be exploited as a buffer element providing ESD circuit protection for receiver devices, power supply clamp circuits and I/O driver circuits.
Claims16
An SiGe device configured to exhibit high velocity saturation resistance characteristic for buffering large voltages at low currents, wherein for circuit applications, said SiGe device is connected in series with a circuit element for protection of said circuit element.
Dependencies are inferred from the claim text.