Photoelectric conversion device and manufacturing method thereof

A photoelectric conversion device comprising:

• numerous crystalline semiconductor particles deposited on a substrate serving also as the electrode of one side;
• an insulator interposed among the crystalline semiconductor particles;
• and the other electrode formed above the crystalline semiconductor particles,
• wherein the crystalline semiconductor particles having control portions of a first conductivity type and peripheral portions of a second conductivity type,
• wherein the substrate and each of the crystalline semiconductor particles are joined together by an alloy portion formed by melting together the substrate and that crystalline semiconductor particle.

A photoelectric conversion device comprising:

• numerous crystalline semiconductor particles deposited on a substrate serving also as the electrode of one side;
• an insulator interposed among the crystalline semiconductor particles;
• and the other electrode formed above the crystalline semiconductor particles,
• wherein the crystalline semiconductor particles have central portions of a first conductivity type and peripheral portions of a second conductivity type, and
• wherein a second conductivity-type conductive layer comprising Si is formed over the crystalline semiconductor particles and the insulator.

A photoelectric conversion device comprising:

• numerous crystalline semiconductor particles deposited on a substrate serving also as the electrode of one side;
• an insulator interposed among the crystalline semiconductor particles;
• and the other electrode formed above the crystalline semiconductor particles,
• wherein the crystalline semiconductor particles have central portions of a first conductivity type and peripheral portions of a second conductivity type, and
• wherein a second conductivity-type conductive layer comprising Si and a transparent conductive layer are formed over the crystalline semiconductor particles and the insulator.