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US 6,552,403 B1Granted
Binary non-crystalline oxide analogs of silicon dioxide for use in gate dielectrics
AssigneeNorth Carolina State University
InventorGerald Lucovsky
Life of this patent
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Abstract
The invention generally relates to oxides that may be used in conjunction with integrated circuit devices. The oxides are non-crystalline. The oxides are represented by the formula: ABO4, wherein A is an element selected form Group IIIA of the periodic table; and B is an element selected form Group VB of the periodic table. The oxides may be employed in field effect transistors as tin gate insulating layers having high dielectric constants.
Claims26
A non-crystalline oxide represented by the formula:
- ABO4
- wherein:
- A is an element selected from Group IIIA of the periodic table;
- and
- B is an element selected from Group VB of the periodic table.
2 more elements
A field effect transistor comprising:
- an integrated circuit substrate having a first surface;
- source and drain regions in said substrate at said first surface in a spaced apart relationship;
- a gate insulating layer on said substrate at said first surface between said spaced apart source and drain regions, said gate insulating layer comprising a non- crystalline oxide represented by the formula:
- ABO4
- wherein A is an element selected from Group IIIA of the periodic table and B is an element selected from Group VB of the periodic table;
- and
- source, drain, and gate contacts on said source and drain regions and said gate insulating layer, respectively.
4 more elements
Dependencies are inferred from the claim text.