Semiconductor transistor devices and structures with halo regions

A semiconductor transistor device comprising:

• a transistor gate over a semiconductor material wafer, the transistor gate having opposing first and second sidewalls;
• first conductivity type, heavily doped, first and second opposing source/drain regions within the semiconductor material wafer beside respective first and second sidewalls;
• first and second opposing oxide layers extending along and covering the respective first and second sidewalls;
• first and second opposing sidewall spacers extending along and at least partially covering respective first and second oxide layers;
• first and second opposing segments consisting of an entirety of the semiconductor wafer material under respective first and second sidewall spacers, the first and second opposing segments being separated from the first and second opposing source/drain regions by respective first and second gap regions of the semiconductor material wafer;
• second conductivity type, first and second opposing halo regions within the respective first and second gap regions and not extending into respective first and second segments;
• and
• one of the first and second conductivity types being n-type and the other of the first and second conductivity types being p-type.

A semiconductor transistor structure comprising:

• a region of a semiconductor wafer;
• a gate over the region, the gate having first and second opposing sidewalls;
• first conductivity type heavily doped first and second opposing source/drain regions proximate the first and second opposing sidewalls, respectively;
• first and second opposing oxide layers extending along and at least partially covering the first and second sidewalls, respectively;
• first and second sidewall opposing spacers extending along and at least partially covering the first and second opposing oxide layers, respectively, the entirety of the semiconductor wafer under the first and second opposing sidewall spacers being defined as first and second segments, respectively, and the first and second segments being separated from respective first and second source/drain regions by respective first and second gap regions, no part of the first and second gap regions being under respective first and second sidewall spacers;
• and
• second conductivity type halo regions within the first and second gap regions and not extending into the first and second segments, wherein one of the first and second conductivity types is n-type and the other is p-type.