Back to results
US 6,552,380 B1Granted
Semiconductor device and manufacturing method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsTsutomu Sato, Ichiro Mizushima, Yoshitaka Tsunashima
Life of this patent
Estimating the term…
Abstract
A deep trench is formed in a silicon substrate. The inner surface of the trench is next coated with a thin polycrystalline silicon film (liner film) so as not to close the trench. A silicon germanium film (node electrode) is then formed on the thin polycrystalline silicon film so as not to close the trench. Next, a heat treatment is performed on the silicon germanium film thereby to flow only the silicon germanium so that the trench is filled.
Claims6
A semiconductor device comprising:
- a silicon substrate having a trench formed in a surface of the silicon substrate, the trench having an opening end of a rounded shape, a rounded bottom portion, and an opening of the rounded shape between the opening end and the rounded bottom portion;
- a polycrystalline silicon film coated on an inner surface of the trench such that the trench is not closed;
- and
- a conductive film made of material having a lower melting point than silicon and formed on the polycrystalline silicon film so as to fill the trench.
1 more element
Dependencies are inferred from the claim text.