Group III nitride compound semiconductor device
AssigneeToyoda Gosei Co., Ltd.
InventorsMasayoshi Koike, Shiro Yamasaki
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Abstract
Aluminum gallium nitride (AlxGa1−xN, 0<x<1) is employed as a substrate of a Group III nitride compound semiconductor device. In light-emitting diodes and laser diodes employing the substrate, crack generation is prevented, even when a thick cladding layer formed of aluminum gallium nitride (AlxGa1−xN, 0<x<1) is stacked on the substrate. The smaller the difference in Al compositional proportion between the substrate and an aluminum gallium nitride (AlxGa1−xN, 0<x<1) layer, the less likely the occurrence of crack generation.
Claims15
A Group III nitride compound semiconductor device comprising a substrate and one or more Group III nitride compound semiconductor layers on first and second surfaces of the substrate, wherein aluminum gallium nitride satisfying the formula (AlxGa1−xN, 0<x<1) is employed as the substrate.
A Group III nitride compound semiconductor device comprising a substrate and one or more Group III nitride compound semiconductor layers on a first surface or first and second surfaces of the substrate, wherein aluminum gallium nitride (Alx1Ga1−x1N, 0<x1<1) is employed as the substrate and aluminum gallium nitride (AlxGa1−xN, 0<x<1) is employed as the at least one layer in said Group III nitride compound semiconductor layers and further wherein x1 is equal or nearly equal to x.
Dependencies are inferred from the claim text.