Light emitting diode and fabricating method thereof

A method forming a light emitting diode, comprising the steps of:

• providing a substrate;
• forming an epitaxial structure on a first surface of said substrate, wherein said epitaxial structure is formed by a plurality of III-V compound semiconductor epitaxial layers including an active layer and a Bragg reflector layer sandwiched between said active layer and said substrate;
• conducting a treatment of oxidation for forming a high reflectivity and current insulating layer in a portion of said Bragg reflector layer;
• forming a first electrode on a second surface of said substrate;
• and
• forming a second electrode on said epitaxial structure.

A structure of a light emitting diode, comprising:

• a substrate having a first surface on one side a second surface on the other side, wherein a first electrode has been formed on said first surface;
• an epitaxial structure forming on said second surface, wherein said epitaxial structure is formed by a plurality of III-V compound semiconductor epitaxial layers including an active layer and a Bragg reflector layer sandwiched between said active layer and said substrat, and said Bragg reflector layer comprises:
• at least one oxidizable layer, wherein a portion of said at least one oxidizable layer is oxidized, thereby forming a current insulating layer, and said at least one oxidizable layer is at least one high aluminum-contained AlGaAs layer, and the aluminum composition of said at least one oxidizable layer is between about 80% and about 100% and
• at least one semiconductor layer, wherein said at least one semiconductor layer and said at least one oxidizable layer are stacked each other;
• and
• a second electrode formed on said epitaxial structure.