Semiconductor device and process for producing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHisashi Ohtani, Etsuko Fujimoto
Life of this patent
Estimating the term…
Abstract
To provide a semiconductor device having a large aperture ratio, in which an auxiliary capacitance of a large capacity is provided in each pixel. Capacitance wiring 102 comprising a tantalum film is formed on a substrate 101 having an insulating surface, and a tantalum oxide film 103 is formed by heat oxidation thereof. An active layer 104 comprising a semiconductor thin film is formed, and an auxiliary capacitance comprising the structure obtained by sandwiching the tantalum oxide film 103 with a part of the active layer 104 and the capacitance wiring 102 is formed. The active layer 104 functions as an active layer of a top-gate TFT.
Claims18
A semiconductor device comprising:
- first and second conductive films formed over a substrate;
- an insulating film formed over said first and second conductive films;
- and
- a thin film transistor formed over said insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween,
- wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said second conductive film.
A semiconductor device comprising:
- first and second conductive films formed over a substrate;
- an insulating film formed over said first and second conductive films;
- and
- a thin film transistor formed adjacent to said first conductive film with said insulating film interposed therebetween, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween,
- wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said second conductive film.
A semiconductor device comprising:
- first and second conductive films formed over a substrate;
- a first insulating film formed over said first and second conductive films;
- a second insulating film formed over said first insulating film;
- a thin film transistor formed over said second insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween,
- wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said second conductive film via a hole formed in said first insulating film.
A semiconductor device comprising:
- a light shielding film formed over a substrate;
- a capacitor wiring formed over said substrate;
- an insulating film formed over said light shielding film and said capacitor wiring;
- and
- a thin film transistor formed over said insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween,
- wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said capacitor wiring.
A semiconductor device comprising:
- a light shielding film formed over a substrate;
- a capacitor wiring formed over said substrate;
- an insulating film formed over said light shielding film and said capacitor wiring;
- and
- a thin film transistor formed adjacent to said light shielding film with said insulating film interposed therebetween, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween,
- wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said capacitor wiring.
A semiconductor device comprising:
- a light shielding film formed over a substrate;
- a capacitor wiring formed over said substrate;
- a first insulating film formed over said light shielding film and said capacitor wiring;
- a second insulating film formed over said first insulating film;
- and
- a thin film transistor formed over said second insulating film, said thin film transistor comprising a semiconductor film, a gate electrode and a gate insulating film interposed therebetween,
- wherein an auxiliary capacitor is formed between a portion of said semiconductor film and said capacitor wiring via a hole formed in said first insulating film.
Dependencies are inferred from the claim text.