Back to results
US 6,552,358 B2Granted
High power single mode laser and method of fabrication
AssigneeAgere Systems Inc.
InventorsSi Hyung Cho, William C. Dautremont-Smith, Sun-Yuan Huang
Life of this patent
Estimating the term…
Abstract
A semiconductor laser having a single transverse mode operation. Optical power higher than that generated by conventional pump lasers is achieved by widening the gain medium without inducing the second transverse mode. This is accomplished by providing a small refractive index difference between active and blocking regions of the laser. The refractive index difference between the laser active region material and the laser blocking region material at the fundamental frequency is less than about 0.029.
Claims27
A semiconductor laser comprising:
- an active region having a first material;
- blocking regions having a second material comprising one or more layers, the blocking regions adjacent to and extending laterally from opposite sides of the active region;
- wherein the refractive index difference between the first material and the second material at a fundamental frequency of the laser is less than about 0.029, and wherein the laser has a single transverse mode.
Dependencies are inferred from the claim text.